Systematics of strongly correlated ternary 4f compounds on the plane hybridization—f-level occupancy
Systematics of strongly correlated ternary 4f compounds on the plane hybridization—f-level occupancy
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强相关三元4f化合物在平面杂化上的系统学——f级占据
DOI：
10.1016/j.jmmm.2006.10.506
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发表时间：
2007
影响因子：
2.7
通讯作者：
J. Spałek
中科院分区：
文献类型：
--
作者：
A. Ślebarski;J. Spałek
我们比较了各种三元化合物CeMX（M-金属：Rh，Pd，Ni和X=Sb，Sn或Al）的行为类型，与早期的安德森晶格模型内获得的理论相图。特别地，我们将这些化合物定位在平面杂化与4f能级占据的相图上。这些参数已被确定实验从X射线光电子能谱使用Gunnarson-Schönhammer方法。此外，我们比较了4f磁矩的值，以及总态密度。除了CeRhSb和CeNiSn的近藤绝缘间隙值外，该协议是良好的。
We compare the type of behavior of various ternary compounds CeMX (M-metal: Rh, Pd, Ni, and X=Sb, Sn or Al), with the earlier theoretical phase diagram obtained within the Anderson-lattice model. In particular, we locate those compounds on this phase diagram on the plane hybridization vs. 4f-level occupancy. Those parameters have been determined experimentally from the X-ray photoemission spectra using the Gunnarson–Schönhammer approach. Additionally, we compare the values of the 4f-magnetic moment, as well as the total density of states. The agreement is good except for the value of the Kondo insulating gap for CeRhSb and CeNiSn.