Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS (VTCMOS)
Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS (VTCMOS)
复制标题
由于可变阈值电压互补 MOS (VTCMOS) 中的有限反型层厚度，利用增强的体效应因子改进电流驱动
DOI：
10.1143/jjap.42.1988
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
T. Nagumo;T. Hiramoto
提出了一种利用高速模式可变阈值电压互补金属氧化物半导体（VTCMOS）来恢复由于有限反型层厚度和栅极耗尽而退化的电流驱动的新方案。该方案利用了身体效应。有限的反型层厚度和栅极耗尽效应增强了体效应，因此衬底偏压更有效地工作。通过测量全耗尽绝缘体上硅（FD SOI）金属氧化物半导体场效应晶体管（MOSFET），实验研究了体效应的增强。栅氧化层厚度的影响，该方案的可扩展性，以及短沟道效应的影响进行了讨论。
A new scheme for recovering the current drive that is degraded due to the finite inversion layer thickness and gate depletion, using a high-speed mode variable-threshold-voltage complementary metal oxide semiconductor (VTCMOS), has been proposed. This scheme utilizes the body effect. The effects of finite inversion layer thickness and gate depletion enhance the body effect, and therefore substrate bias works more effectively. This enhancement of body effect is experimentally examined by measuring fully depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The effect of gate oxide thickness, the scalability of this scheme, and the impact of the short-channel effect are also discussed.