6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
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来自无铝有源区 (λ=805 nm) 二极管激光器的 6.1 W 连续波前端功率
DOI：
10.1063/1.120628
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发表时间：
1998
影响因子：
4
通讯作者：
J. Morris
中科院分区：
文献类型：
--
作者：
J. K. Wade;L. Mawst;D. Botez;R. Nabiev;M. Jansen;J. Morris
通过低压金属有机化学气相沉积生长并以 λ=805 nm 发射的无铝有源区二极管激光器已针对高连续波输出功率进行了优化。由 InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P 激光器结构组成的 1 mm 长器件的阈值电流密度 Jth 为 310 A/cm2，阈值电流特征温度 T0 (135 K) 和微分量子效率 T1 (900 K) 相对较高。具有 10%/90% 涂层和 100 μm 宽条纹的激光器在 10°C 的散热器温度下可提供 6.1 W 的最大连续波输出功率。该器件因灾难性光学镜损坏（COMD）而失效，其中内部功率密度 PCOMD 为 17.4 MW/cm2；也就是说，是传统刻面涂层、810 nm 发射、AlGaAs 有源区二极管激光器的两倍。
Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure have a threshold-current density, Jth, of 310 A/cm2 and relatively high values for the characteristic temperatures of the threshold current, T0 (135 K), and differential quantum efficiency, T1 (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, PCOMD, is 17.4 MW/cm2; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers.