Role of Defects and Power Dissipation on Ferroelectric Memristive Switching
Role of Defects and Power Dissipation on Ferroelectric Memristive Switching
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DOI：
10.1002/aelm.202101392
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发表时间：
2022-03
影响因子：
6.2
通讯作者：
P. Roy;S. Kunwar;Di Zhang;Di Chen;Zachary J Corey;Bethany X. Rutherford;Haiyan Wang;J. MacManus‐Drisco
中科院分区：
文献类型：
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作者：
P. Roy;S. Kunwar;Di Zhang;Di Chen;Zachary J Corey;Bethany X. Rutherford;Haiyan Wang;J. MacManus‐Drisco
信息技术的进步需要低功耗、高速度和大容量的非易失性存储器。忆阻器不仅在信息存储方面有潜在的应用，在神经形态计算方面也有潜在的应用。忆阻器件主要是利用二元氧化物作为阻性开关材料。另一方面，基于三元铁电氧化物的极化辅助忆阻器件由于其独特的开关特性而受到越来越多的关注。然而，潜在的开关机制和电流-电压旋转方向仍未完全了解。通过比较具有不同阳离子化学计量的BaTiO3、BiFeO3和Bi1‐xFeO3‐δ铁电忆阻器的化学计量，发现非化学计量诱导的陷阱在控制铁电忆阻开关行为中起着关键作用。具有轻微关闭化学计量的铁电体显示出大大增强的开关性能，并且开关的开/关比主要由陷阱能级和浓度决定。缺陷影响电流-电压滞回线的旋转方向，可通过综合和功耗控制。这些发现为理解铁电记忆电阻器中缺陷的作用提供了见解，并为设计性能更高的铁电记忆电阻器提供了指导。
Advancement of information technology requires low power, high speed, and large capacity non‐volatile memory. Memristors have potential applications for not only information storage but also neuromorphic computation. Memristive devices are mostly focused on the use of binary oxides as the resistive switching materials. On the other hand, polarization assisted memristive devices based on ternary ferroelectric oxides are attracting more attention due to their unique switching properties. However, the underlying switching mechanisms and the current–voltage rotation direction are still not fully understood yet. By comparing stoichiometric BaTiO3, BiFeO3, and Bi1‐xFeO3‐δ ferroelectric memristors with different cation stoichiometry, it is found that off‐stoichiometry‐induced traps can play a critical role in controlling the ferroelectric memristive switching behavior. Ferroelectrics with slight off‐stoichiometry show greatly enhanced switching properties, and the switching on/off ratio is mainly determined by the trap energy levels and concentrations. The rotation direction of current–voltage hysteresis loop is affected by the defects, which can be controlled by synthesis and power dissipation. These findings provide insight in understanding the role of defects in ferroelectric memristors and offer guidance to design ferroelectric memristors with enhanced performance.