A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology
A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology
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DOI：
10.1109/tmtt.2013.2253792
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发表时间：
2013-05-01
影响因子：
4.3
通讯作者：
Kissinger, Dietmar
中科院分区：
文献类型：
--
作者：
Laemmle, Benjamin;Schmalz, Klaus;Kissinger, Dietmar
在本文中，集成介电传感器与读出电路在未修改的SiGe BiCMOS技术在125 GHz的。该传感器由一个500 μ m的短半波共面波导传输线在硅工艺的最上层金属层，而读出的反射系数测量与集成反射计和信号源获得。通过包含集成虚拟传感器的电路接线盒验证反射计。反射计能够测量117至134 GHz的反射系数相位，分辨率为0.1度，标准偏差为0.082度。集成传感器与反射计电路已在190-GHz的f（T）SiGe：C BiCMOS技术制造。该器件的面积为1.4 mm（2），采用3.3 V电源供电时功耗为75 mA。电路已组装在印刷电路板上，通过浸入测试液体进行表征。传感器由控制器板和个人计算机控制，每个频率点的测量时间可达1 ms。的传感器的功能被证明从118至133 GHz的传感器浸入到不同的二元甲醇-乙醇混合物，显示出良好的理论和测量之间的相关性。传感器显示出0.220度的测量相位的标准偏差，并且能够检测0.0125的ε ′（r）差。
In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-mu m shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1 degrees and a standard deviation of 0.082 degrees. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz f(T) SiGe:C BiCMOS technology. It spans an area of 1.4 mm(2) and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220 degrees and is able to detect a difference in epsilon'(r) of 0.0125.