Modeling of capillary discharge plasma for x-ray lasers, XUV lithography and other applications

Modeling of capillary discharge plasma for x-ray lasers, XUV lithography and other applications
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用于 X 射线激光器、XUV 光刻和其他应用的毛细管放电等离子体建模

DOI:
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发表时间:
2002
期刊:
International Conference on High-Power Particle Beams
影响因子:
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通讯作者:
W. Silfvast
W. Silfvast
中科院分区:
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文献类型:
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作者:
V. Shlyaptsev;J. Dunn;S. Moon;K. Fournier;A. Osterheld;J. Rocca;J. Filevich;M. Marconi;E. Jankowska;E. Hammarsten;S. Sakadžić;A. Rahman;M. Frati;F. Tomasel;N. Fornaciari;D. Buchenauer;H. Bender;S. Karim;M. Kanouff;J. Dimkoff;G. Kubiak;G. Shimkaveg;W. Silfvast

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很久以前就认识到,Z箍缩由于其有利的几何形状和可实现的高密度和温度而代表了X射线激光器(XRL)的非常自然的介质。它们也是非常有效的X射线源。它们的一个变种,毛细管放电,吸引了等离子体物理研究人员近二十年的注意力。它已被用于热稠密等离子体形成和X射线激光器[1,2],用于传输激光束和X射线光刻中的XUV辐射[3,4],用于基本Z箍缩研究和其他一些研究。毛细管放电的效率、简单性和低成本的组合允许将毛细管X射线激光器缩放到桌面尺寸。在本文中,我们展示了下一个,3-4倍短波长的X射线激光的建模结果。作为一种有效的线辐射和连续辐射的X射线源,它可以用于科学和技术中许多实际重要的应用。特别是,毛细管放电可以出现作为新兴的XUV微光刻强大的潜在候选人。本文介绍了对极紫外辐射源的光谱和密度进行数值模拟的结果,其中包括等离子体加热和动力学、详细的原子动力学和辐射输运以及材料烧蚀物理。
It is long ago recognized that Z-pinches represent very natural medium for x-ray lasers (XRL) due to its favorable geometry and achievable high densities and temperatures. They also are very efficient x-ray sources. One of their variants, the capillary discharges, attracted attention of plasma physics researchers for almost two decades. It has been used for hot dense plasma formation and x-ray lasers [1,2], for transportation of laser beams and XUV radiation generation in x-ray lithography[3,4], for basic Z-pinch research and some others. The combination of efficiency, simplicity and low cost of capillary electrical discharges allowed to scale capillary x-ray lasers to table-top dimensions. In this paper we show the modeling results for next, 3–4 times shorter wavelength x-ray lasers. As an efficient x-ray source of line and continuum radiation it can be used for many practically important application in science and technology. In particular, the capillary discharge can appear as powerful potential candidate for emerging XUV microlithography. We present here the results of numerical modeling of spectra and density of Xe EUV source which involved plasma heating and dynamics, detailed atomic kinetics and radiation transport and material ablation physics.