Improved tri-layer microwave dielectric ceramic for 5 G applications
Improved tri-layer microwave dielectric ceramic for 5 G applications
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用于 5G 应用的改进三层微波介电陶瓷
DOI：
10.1016/j.jeurceramsoc.2020.09.008
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发表时间：
2021-01-01
影响因子：
5.7
通讯作者：
Qiao, Jianli
中科院分区：
文献类型：
--
作者：
Wang, Shun;Luo, Weijia;Qiao, Jianli
初步制备了不同TiO2质量分数的三层ZnTi0.97Ge0.03Nb2O8-TiO2-ZnTi0.97Ge0.03Nb2O8陶瓷。多层结构的优点得到了充分展示，微波介电性能由每个介电层的成分控制。与随机分布型ZnTi0.97Ge0.03Nb2O8-TiO2相比，这种trTlayer架构可以实现Qxf值提高近50%。同时，基于平行分布模式，由于Zn2GeO4的存在，介电常数可以获得10%的提高。在 1120 摄氏度下烧结 6 小时后，ZnTi0.92Ge0.03Nb2O8-TiO2-ZnTi0.92Ge0.03Nb2O8 trT 层状陶瓷表现出优异的介电性能（ε(r) = 42.1，Qxf= 51,477 GHz 和 tau(f)= +1.9 ppm/℃），介电常数为 0.04 wt% TiO2，实现了微波介电性能的协同优化。该研究为制备应用于5G无线通信技术的高性能微波介质谐振器提供了方向。
Tri-layer ZnTi0.97Ge0.03Nb2O8-TiO2-ZnTi0.97Ge0.03Nb2O8 ceramics with different mass fractions of TiO2 were initially prepared. The advantages of the multilayer architecture were fully demonstrated, and the microwave dielectric properties were controlled by the components of each dielectric layer. In contrast to the random distribution-type ZnTi0.97Ge0.03Nb2O8-TiO2, this trTlayer architecture could achieve a nearly 50 % increase in the Qxf value. Meanwhile, based on the parallel distribution mode, a 10 % increase in the dielectric constant could be obtained due to the existence of Zn2GeO4. After sintering at 1120 degrees C for 6 h, ZnTi0.92Ge0.03Nb2O8-TiO2-ZnTi0.92Ge0.03Nb2O8 trTlayered ceramics exhibited excellent dielectric properties (epsilon(r) = 42.1, Qxf= 51,477 GHz and tau(f)= +1.9 ppm/degrees C) with 0.04 wt% TiO2, and the cooperative optimization of microwave dielectric properties was achieved. This research provides a direction for the preparation of high-performance microwave dielectric resonators for application in 5 G wireless communication technologies.