Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN
Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN
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DOI：
10.1063/1.2888745
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发表时间：
2008-03
影响因子：
4
通讯作者：
Sungnam Lee;H. Paek;Hyun-Hee Kim;Y. Park;T. Jang;Yu-Sun Park
中科院分区：
文献类型：
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作者：
Sungnam Lee;H. Paek;Hyun-Hee Kim;Y. Park;T. Jang;Yu-Sun Park
研究了在无掩膜横向外延过生长（LEO）平面GaN∕r-蓝宝石上生长的非极性平面InGaN∕GaN多量子阱（mqw）的性质。在缺陷区（种子区和聚结区）上生长的a平面InGaN mqw表面，观察到许多不对称的v形缺陷。原子力显微镜和扫描隧道电镜结果表明，在低缺陷区，a面InGaN MQWs的表面缺陷密度为~ 1.0×107∕cm2，高于常规c面LEO-GaN。a面InGaN MQWs的阴极发光强度分布与表面不对称v型缺陷的分布密切相关。因此，我们认为a-平面InGaN活性层的光学性能受到外延缺陷与InGaN生长动力学极限相互作用产生的不对称v型缺陷的影响。
We investigated the properties of nonpolar a-plane InGaN∕GaN multiple-quantum wells (MQWs) grown on maskless lateral epitaxial overgrowth (LEO) a-plane GaN∕r-sapphire. Many surface defects with asymmetric V-shape were observed on a-plane InGaN MQWs grown on the defective regions which were seed and coalescence regions. In the low defect regions, the surface defect density of a-plane InGaN MQWs was ∼1.0×107∕cm2, which was higher than that of conventional c-plane LEO-GaN, by measuring atomic force microscope and scanning tunneling electron microscope. The cathode luminescence intensity distribution of a-plane InGaN MQWs was significantly dependent on the distribution of surface asymmetric V-defect. Therefore, we suggest that the optical properties of a-plane InGaN active layer were affected by the asymmetric V-defects which were generated by interaction between the epitaxial defects and the limit of InGaN growth kinetics.