A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology
A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology
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采用 SiGe BiCMOS 技术的 135 GHz 差分有源星形混频器
DOI：
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发表时间：
2012
影响因子：
3
通讯作者：
J. Rieh
中科院分区：
文献类型：
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作者：
Dong;J. Rieh
研制了一种采用双巴伦的135 GHz Gm升压下变频有源混频器。该混频器采用0.18 μ mSiGe BiCMOS工艺，在本振频率为134 GHz、功率为10 dBm时，射频频率为134.7GHz时，差模转换增益为11.5dB。该混频器的P-1 dB为-20 dBm，LO-RF隔离为31 dB。整个电路从3 V电源汲取1.3 mA电流。所制作的混频器占用0.23 × 0.54 mm 2的芯片面积（不包括焊盘区）。
A 135 GHz Gm-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18- μm SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P-1 dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 × 0.54 mm2 of chip area excluding pad region.dual baluns