Grain-scale strain mapping for analysis of slip activity in polycrystalline B2 RuAl
Grain-scale strain mapping for analysis of slip activity in polycrystalline B2 RuAl
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用于分析多晶 B2 RuAl 滑移活动的晶粒应变图
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. Pollock
中科院分区：
文献类型：
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作者：
A. Wu;M. De Graef;T. Pollock
采用高分辨率表面位移成像技术研究了单相多晶B2 RuAl合金的应变发展。应变的显着异质性观察到个别晶粒和相邻的晶粒之间。应变积累在一个自相似的方式在晶粒尺度上，在步进加载实验。使用电子背散射衍射（EBSD）收集的晶粒取向数据计算可能的滑移系的施密德因子。考虑到在RuAl中确定的两个主要的活动滑移系，即<$100 <${110}和<$110 <${110}，<$110 <${110}滑移系上的活动主导了所研究的晶粒内的局部应变行为。通过使用聚焦离子束（FIB）系统从目标代表性晶粒中去除箔来进行补充TEM位错分析。在应变最大的晶粒中，观察到了比100个位错密度更高的110个位错。
Strain development in a single phase polycrystalline B2 RuAl alloy has been studied at the local microstructural scale via a high-resolution surface displacement mapping technique. Significant heterogeneity of straining is observed within individual grains and among neighbouring grains. Strains accumulated in a self-similar manner at the grain scale during stepped loading experiments. Schmid factors for the possible slip systems were calculated using grain orientation data collected by electron back-scattered diffraction (EBSD). Considering the two major active slip systems identified in RuAl, i.e. ⟨ 100 ⟩{110} and ⟨ 110⟩{110}, activity on the ⟨ 110⟩{110} slip system dominated the local straining behaviour within the grains investigated. Complementary TEM dislocation analyses were performed by removing foils from targeted representative grains using a focused ion beam (FIB) system. A higher density of ⟨ 110⟩ dislocations compared to ⟨ 100 ⟩ dislocations were observed in the most heavily strained grain.