Singly ionized magnesium-oxygen complex impurities in silicon
Singly ionized magnesium-oxygen complex impurities in silicon
复制标题
硅中单离子化的镁氧络合物杂质
DOI：
10.1002/pssc.200306203
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
L. T. Ho
中科院分区：
文献类型：
--
作者：
L. T. Ho
以往的研究表明，镁在扩散到硅中时，会与晶体中弥散的氧形成镁氧复合杂质。最近，我们已经成功地将镁引入到含有氧以及III族杂质的硅中。我们首次观察到单离化镁氧复合杂质的激发谱，清楚地表明镁氧复合杂质是硅中的双施主。实验结果还表明，单离化镁氧施主的电离能为274.90 meV，比硅中单离化镁施主的电离能稍大。
Previous study indicates, that magnesium, when diffused into silicon, can pair with dispersed oxygen in the crystal to form magnesium–oxygen complex impurities. Recently, we have successfully introduced magnesium into silicon containing oxygen as well as group-III impurities. We have observed for the first time the excitation spectrum of singly ionized magnesium–oxygen complex impurities, which clearly demonstrates that magnesium–oxygen complex impurity is a double donor in silicon. Our experimental result also shows that the ionization energy of singly ionized magnesium–oxygen donor is 274.90 meV, which is slightly larger compared with that of singly ionized magnesium donor in silicon.