Ultrashallow defect states at SiO2∕4H–SiC interfaces
Ultrashallow defect states at SiO2∕4H–SiC interfaces
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SiO2∕4H–SiC 界面的超浅缺陷态
DOI：
10.1063/1.2898502
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发表时间：
2008
影响因子：
4
通讯作者：
L. Feldman
中科院分区：
文献类型：
--
作者：
S. Dhar;X. Chen;P. Mooney;J. Williams;L. Feldman
报道了通过电容 - 电压特性随温度变化的测量，得到的SiO₂/4H - SiC界面在4H - SiC导带边（$E_C$）约0.05 - 0.2 eV能量范围内的界面态密度（$D_{it}$）。对原生干氧化和氮化界面的比较证实了氮化可显著降低$D_{it}$。在仅氧化（无氮化）的情况下，在$E_C$以下约0.05 - 0.2 eV能量范围内的$D_{it}$由一个在$E_C$以下约0.1 eV处的宽$D_{it}$峰组成，该峰能量宽度约为0.2 eV，峰值大小约为$2×10^{13}cm^{-2}eV^{-1}$，且叠加在一个指数衰减的背景分布上。界面氮化完全消除了这个宽峰，但对背景影响不大。报道了通过电容 - 电压特性随温度变化的测量，得到的SiO₂/4H - SiC界面在4H - SiC导带边（$E_C$）约0.05 - 0.2 eV能量范围内的界面态密度（$D_{it}$）。对原生干氧化和氮化界面的比较证实了氮化可显著降低$D_{it}$。在仅氧化（无氮化）的情况下，在$E_C$以下约0.05 - 0.2 eV能量范围内的$D_{it}$由一个在$E_C$以下约0.1 eV处的宽$D_{it}$峰组成，该峰能量宽度约为0.2 eV，峰值大小约为$2×10^{13}cm^{-2}eV^{-1}$，且叠加在一个指数衰减的背景分布上。界面氮化完全消除了这个宽峰，但对背景影响不大。
Interface state density (Dit) at SiO2∕4H–SiC interfaces are reported for states lying energetically within ∼0.05–0.2eV of the conduction band edge (EC) of 4H–SiC using capacitance-voltage characterization as a function of temperature. Comparison of as-grown dry oxidized and nitrided interfaces confirms the significant reduction of Dit associated with nitridation. In the as-oxidized case (no nitridation), the Dit in the energy range ∼0.05–0.2eV below EC is found to consist of a broad Dit peak at about ∼0.1eV below EC with an energy width of about ∼0.2eV and a peak magnitude of ∼2×1013cm−2eV−1 superimposed on an exponentially decaying background distribution. Interfacial nitridation completely eliminates the broad peak but does not strongly affect the background.Interface state density (Dit) at SiO2∕4H–SiC interfaces are reported for states lying energetically within ∼0.05–0.2eV of the conduction band edge (EC) of 4H–SiC using capacitance-voltage characterization as a function of temperature. Comparison of as-grown dry oxidized and nitrided interfaces confirms the significant reduction of Dit associated with nitridation. In the as-oxidized case (no nitridation), the Dit in the energy range ∼0.05–0.2eV below EC is found to consist of a broad Dit peak at about ∼0.1eV below EC with an energy width of about ∼0.2eV and a peak magnitude of ∼2×1013cm−2eV−1 superimposed on an exponentially decaying background distribution. Interfacial nitridation completely eliminates the broad peak but does not strongly affect the background.