Single particle-induced latchup
Single particle-induced latchup
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DOI：
10.1109/23.490898
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发表时间：
1996-04
影响因子：
1.8
通讯作者：
G. Bruguier;J. Palau
中科院分区：
文献类型：
--
作者：
G. Bruguier;J. Palau
本文对涉及重离子环境的电子设备应用中遇到的单事件闩锁 (SEL) 硬故障模式进行了最新概述。这种现象是 CMOS 技术特有的。在简短描述重离子与硅相互作用引起的效应后，讨论单粒子闩锁。了解这些影响对于了解不同的故障是必要的。本文包括对闩锁现象和不同触发模式的描述、模型和强化解决方案的回顾，最后介绍了仿真方法的新进展。
This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches.