Si wafers uniformly spaced; bonding and diagnostics
Si wafers uniformly spaced; bonding and diagnostics
复制标题
均匀间隔的硅片；
DOI：
10.1063/1.1141166
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发表时间：
1990
影响因子：
1.6
通讯作者：
D. Bishop
中科院分区：
文献类型：
--
作者：
I. Rhee;F. Gasparini;A. Petrou;D. Bishop
一种新的Si - SiO2键合工艺已经被开发出来，以实现两个硅晶片之间2和3英寸的均匀间距。目前已获得0.1 ~ 3.9 μm之间的间距。静水压力用于迫使两个晶圆在需要粘合的地方紧密接触。在~ 1150°C的温度下进行键合。在室温下用法布里-珀罗干涉仪技术和在低温下用He II的超流密度测量来检查晶圆之间的键合均匀性和间距。这些结果与椭圆计和手写笔测量的氧化物厚度进行了比较，这是用来控制晶圆间距的。我们发现这些不同的技术产生一致的结果。
A new Si‐SiO2 bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry–Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers’ spacing. We find that these different techniques yield consistent results.