X-ray-induced Luminescence Properties of Nd-doped GdVO4
X-ray-induced Luminescence Properties of Nd-doped GdVO4
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DOI：
10.18494/sam.2021.3319
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发表时间：
2021-01-01
影响因子：
1.2
通讯作者：
Yanagida, Takayuki
中科院分区：
文献类型：
--
作者：
Akatsuka, Masaki;Kimura, Hiromi;Yanagida, Takayuki
合成了nd掺杂GdVO4单晶，并对其光致发光和闪烁性能进行了评价。nd掺杂的样品由于Nd3+的4f-4f跃迁而出现闪烁，峰值在900、1060和1320 nm左右。此外，我们评估了闪烁信号强度与x射线照射剂量率之间的关系，用于剂量学应用。所有nd掺杂样品均表现出高灵敏度，动态范围为0.006 ~ 60 Gy/h。
Nd-doped GdVO4 single crystals were synthesized and their photoluminescence and scintillation properties were evaluated. The Nd-doped samples showed scintillation due to the 4f-4f transitions of Nd3+ with peaks at around 900, 1060, and 1320 nm. In addition, we evaluated the relationship between the scintillation signal intensity and the X-ray exposure dose rate for dosimetric application. All the Nd-doped samples demonstrated high sensitivity with a dynamic range from 0.006 to 60 Gy/h.