First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
复制标题
DOI：
10.1016/j.nima.2003.11.015
复制
发表时间：
2004-02-01
影响因子：
1.4
通讯作者：
Turner, PR
中科院分区：
文献类型：
--
作者：
Casse, G;Allport, PP;Turner, PR
重强子辐照导致n型硅探测器的类型反转。经过类型反转后，在低偏置电压下，从n侧读出的硅微带探测器收集到的电荷比从p侧读出的要高。n侧读出器已成功地与富氧n型硅衬底结合使用，以最大限度地提高微带探测器的辐射硬度。另外，n侧读出可以在p型衬底上实现，从而降低了制造的复杂性。在标准和富氧p型衬底上制备了微型硅微带探测器。本文首次比较了带电强子辐照前后两种情况下探测器的电荷收集特性。(C) 2003 Elsevier B.V.版权所有
Heavy hadron irradiation leads to type inversion of n-type silicon detectors. After type inversion, the charge collected at low bias voltages by silicon microstrip detectors is higher when read out from the n-side compared to p-side read out. The n-side read out has been successfully used in combination with oxygen-enriched n-type silicon substrate to maximise the radiation hardness of microstrip detectors. Alternatively, the n-side read out can be implemented on p-type substrates reducing the complexity of fabrication. Miniature silicon microstrip detectors made on standard and oxygen-enriched p-type substrate have been produced. The charge collection properties of such detectors with and without oxygenation are here compared for the first time after severe charged hadron irradiation. (C) 2003 Elsevier B.V. All rights reserved.