Three-dimensional steady and transient fully coupled electro-thermal simulation of AlGaN/GaN high electron mobility transistors: Effects of lateral heat dissipation and thermal crosstalk between gate fingers
Three-dimensional steady and transient fully coupled electro-thermal simulation of AlGaN/GaN high electron mobility transistors: Effects of lateral heat dissipation and thermal crosstalk between gate fingers
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DOI：
10.1063/1.5002544
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发表时间：
2017-09
期刊：
影响因子：
1.6
通讯作者：
Ashu Wang;Lingyan Zeng;Wen Wang
中科院分区：
文献类型：
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作者：
Ashu Wang;Lingyan Zeng;Wen Wang
在本文中，我们开发了AlGaN/GaN高电子迁移率晶体管（HEMT）的三维全耦合电热（ET）模拟，这是一个相对完整和准确的模拟相比，目前现有的模拟，能够描述的横向ET行为的设备。作为模拟的应用，我们研究了栅宽度（WG）和栅指数目（NG）对器件稳态和瞬态ET行为的影响。稳态结果表明，对于窄栅和多指结构，横向热耗散和栅指之间的热串扰分别对器件的ET行为产生显著影响。然而，瞬态结果表明，在器件接通后的时间尺度内，ET行为不受WG和NG的影响，即，横向散热和热串扰没有影响。这表明，当器件工作在高频时，增加WG和NG以提高功率输出并不合适。
In this paper, we develop three-dimensional fully coupled electro-thermal (ET) simulation for AlGaN/GaN high electron mobility transistors (HEMTs), which is a relative complete and accurate simulation compared to the current existed simulations, capable of describing the lateral ET behavior of the device. As applications of this simulation, we investigate impact of the gate width (WG) and number of the gate fingers (NG) on the steady and transient ET behavior of the device. The steady results show that the lateral heat dissipation and thermal crosstalk between the gate fingers significantly affects the ET behavior for the device with narrow gate and multifinger, respectively. However, the transient results show that, within a time scale after the device switching on, the ET behavior is not influenced by WG and NG, i.e., the lateral heat dissipation and thermal crosstalk have no effects. This indicates that when the device operating in high frequency, increasing WG and NG to improve the power output is not...