Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes
Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes
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DOI：
10.1116/1.1629712
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发表时间：
2003-11-01
影响因子：
1.4
通讯作者：
Samukawa, S
中科院分区：
文献类型：
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作者：
Okigawa, M;Ishikawa, Y;Samukawa, S
我们发现，真空紫外（VUV）光发射的等离子体引起的电荷耦合器件（CCD）图像传感器的暗电流。当用氦（He）、氩（Ar）或氧（O-2）等离子体辐照CCD时，He等离子体在CCD中引起的等离子体感生暗电流高于Ar或O-2等离子体。为了研究真空紫外辐射对He等离子体的影响，采用两种在片监测装置测量了SiO2中的等离子体感生电流，以区分He离子和He真空紫外辐射的影响。一个监控。该装置具有仅允许He VUV 58.4 nm通过的铝过滤器，而另一个没有过滤器。我们进行了时间分辨测量实验，使用这两种类型的设备在脉冲时间调制的He等离子体（He-TM等离子体）。在滤波装置的作用下，等离子体关断后真空紫外强度的衰减与等离子体感应电流曲线的衰减完全对应。另一方面，在无过滤装置中，等离子体感生电流的衰减曲线与等离子体中电子密度的衰减曲线一致。换句话说，TM等离子体不会降低离子感生电流，但可以完全降低SiO2中的光感生电流。在CCD图像传感器中，我们发现TM等离子体显著地抑制了等离子体感生的暗电流。因此，TM等离子体对CCD暗电流的影响是由于减少等离子体中的光子的影响。(C)2003年美国真空学会。
We found that vacuum-ultra/violet (VUV) light emitted by plasmas causes dark current in charge coupled device (CCD) image sensors. When a CCD was irradiated with inductively coupled plasmas using helium, (He), argon (Ar) or oxygen (O-2) gas, the He plasma caused higher plasma-induced dark current in the CCD than the Ar or O-2 plasmas. To investigate the influence of VUV radiation in He plasma, the plasma-induced electric current in SiO2 was measured using two type s of on-wafer monitoring devices to separate the effects of He ions and He VUV radiation. One monitoring. device has an aluminum filter that only allows He VUV 58.4 nm to pass through, and the other has no filter. We performed time-resolved-measurement experiments using the two types of devices in pulse-time-modulated He plasma (He-TM plasma). With the filter device, the decay of the VUV intensity after plasma off corresponded completely to the decay of the plasma-induced current curve. On the other hand, in the no-filter device, decay curve of the plasma-induced current coincided with that of the electron density in the plasma. In other words, the TM plasma does not reduce the ion-induced current, but can completely reduce the photoinduced current in SiO2. In the CCD image sensor we found that the TM plasma dramatically, suppresses plasma-induced dark current. Consequently, the effect of TM plasma on the CCD dark current is due to the influence of reducing the photons in the plasma. (C) 2003 American Vacuum Society.