Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography
Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography
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自开发聚硅烷深紫外光刻胶 - 光化学、光物理学和亚微米光刻
DOI：
10.1117/12.947830
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
Adam Johnson
中科院分区：
文献类型：
--
作者：
J. M. Zeigler;L. Harrah;Adam Johnson
研究了一类在深紫外光照射下具有较好自显影性能的新型烷基硅烷共聚物。用KrF准分子光源对这些材料进行投影光刻，可以再现0.8 μ的特征。材料去除的机制主要是光化学性质，并通过高量子产率的亚甲硅烷基排出/氧化过程产生化学惰性的挥发性硅氧烷作为主要的光产物。
A new class of alkyl silane copolymers with relatively facile self-developing behavior under deep UV exposure has been examined. These materials can reproduce 0.8 μ features by projection lithography with a KrF excimer light source. The mechanism of material removal is primarily photochemical in nature and yields chemically inert volatile siloxanes as the major photoproducts, via a high quantum yield silylene expulsion/oxidation process.