Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells
Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells
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DOI:
10.1016/j.jcrysgro.2010.11.009
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发表时间:
2011-03
影响因子:
1.8
通讯作者:
S. Nakano;X. Chen;B. Gao;K. Kakimoto
中科院分区:
文献类型:
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作者:
S. Nakano;X. Chen;B. Gao;K. Kakimoto