Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes
Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes
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DOI：
10.1109/led.2013.2280017
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发表时间：
2013-11-01
影响因子：
4.9
通讯作者：
Park, Youngsoo
中科院分区：
文献类型：
--
作者：
Kim, Jaekyun;Kim, Joosung;Park, Youngsoo
研究了InGaN多量子阱中V形凹坑（倒六边形凹坑）尺寸对InGaN发光二极管反向漏电流的影响。结果发现，具有较大V形凹坑的InGaN LED的反向漏电流在-30 V下从1.80 mA显著降低到3.84 nA，降低了几个数量级。我们认为，这种改善是由于通过扩大V型坑形成在深中心处捕获的载流子的Poole-Frenkel势垒高度增加，从而导致InGaN LED的反向电流降低。
We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse leakage current of InGaN light-emitting diodes (LEDs). It was found that the reverse leakage current of InGaN LEDs with larger V-shaped pits is significantly reduced from 1.80 mA down to 3.84 nA at -30 V by several orders of magnitude. We claim that this improvement is accounted for increased Poole-Frenkel barrier height of carrier trapped at the deep centers via enlarged V-pit formation, consequently resulting in lower reverse current of InGaN LEDs.