Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces
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Si(001)-2×1 表面下单个硼掺杂原子的扫描隧道显微镜观察
DOI：
10.1143/jjap.44.l1436
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发表时间：
2005
影响因子：
1.5
通讯作者：
T. Kanayama
中科院分区：
文献类型：
--
作者：
M. Nishizawa;L. Bolotov;T. Kanayama
用扫描隧道显微镜(STM)探测到了位于Si(001)-2×1表面下的单个B掺杂原子。在填充态图像中，亚表面B原子表现为一个宽阔的突起，而在空态图像中，它表现为一个宽陷或局域突起，这取决于STM针尖的情况。这种掺杂外观的变化归因于针尖的功函数(WF)的不同，即针尖诱导的能带弯曲量随针尖WF的不同而不同，从而导致在相同的偏置电压下不同的隧道路径和相反的掺杂外观。
Individual B dopant atoms residing beneath Si(001)-2×1 surfaces have been detected by scanning tunneling microscopy (STM). A subsurface B atom appears as a broad protrusion in filled-state images, while it appears as either a broad depression or a localized protrusion in empty-state images depending on the STM tip condition. This variation in dopant appearance is attributed to the different work function (WF) of the tip, i.e., the amount of tip-induced band bending differs depending on the tip WF, resulting in a different tunneling path and an opposite dopant appearance under the same bias voltage.