Electric Breakdown Between Nanogap Separated Platinum Electrodes
Electric Breakdown Between Nanogap Separated Platinum Electrodes
复制标题
纳米间隙分离铂电极之间的电击穿
DOI：
10.1166/nnl.2009.1038
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发表时间：
2009
影响因子：
--
通讯作者：
K. Sangeeth
中科院分区：
文献类型：
--
作者：
Prashant Kumar;K. Sangeeth
研究了用电子束光刻技术在300 nm薄氧化硅衬底上制备的由纳米间隙（60-200 nm）隔开的铂尖膜电极在空气介质中的电场击穿。对于200 nm的电极间隙，没有观察到电击穿的签名高达100 V。在I-V曲线中的膝状特征表示空气在35 V下对于70 nm的电极间隙的电击穿。此外，如FESEM图像中所观察到的，电击穿引起电极间隙中的电极材料流动;与击穿前的器件相比，这又引起击穿后的器件具有更高的电导率。场致发射电流引起的电迁移的建议是负责所观察到的效果。
Investigations concerned to electric field breakdown in air medium were carried out for pointed platinum film electrode separated by nanogap (60–200 nm) fabricated onto 300 nm thin silicon oxide on silicon substrate by electron beam lithography. For 200 nm electrode gap, no signature of electric breakdown was observed upto 100 V. Knee-like features in I–V curve symbolizes the electrical breakdown of air at 35 V for 70 nm electrode gap. Moreover the electrical breakdown gives rise to electrode material flow in the electrode gap as observed in FESEM images; which in turn gives rise to higher conductivity registered for the device after the breakdownas compared to that for the device before breakdown. Field emission current induced electromigration is proposed to be responsible for the observed effects.