Colossal permittivity in titanium dioxide ceramics modified by tantalum and trivalent elements
Colossal permittivity in titanium dioxide ceramics modified by tantalum and trivalent elements
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DOI:
10.1016/j.actamat.2015.09.046
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发表时间:
2016-01-15
期刊:
影响因子:
9.4
通讯作者:
Wu, Wenjuan
中科院分区:
文献类型:
--
作者:
Li, Zhenwei;Wu, Jiagang;Wu, Wenjuan
Colossal permittivity (CP) materials continue to attract significant interest for their applications in highperformance capacitors and scaling advances in electronic devices. However, the unbalanced developments of their dielectric constants, dielectric losses, and stabilities still hinder practical applications. In this study, we attained a colossal permittivity (epsilon(r) = 10(4)similar to 10(5), 1 kHz) in a series of new titanium dioxide (i.e., (A(0.5)Ta(0.5))(x)Ti1-xO2, where A = Al, Sm, Bi, Fe, In, Dy, Ga, Gd, Yb, or Sc) ceramics containing Ta and trivalent elements that is comparable or superior to the previously reported results in In and Nb co-doped ceramics. In addition, a low dielectric loss (tan delta similar to 5.4%, 1 kHz) was achieved in the ceramics by tailoring the types of trivalent elements used; such a ceramic also shows relatively good dielectric properties with regard to frequency (10(2)similar to 10(6) Hz) and temperature (-150-200 degrees C) stabilities. The formation of defectdipole clusters (e.g., Al3+PVo-Ti3+ and Ta(5+)Ti(3+)A(Ti) (A = Ti3+/Al3+/Ti4+)) induced by Ta and trivalent elements should be responsible for the observed enhancements in dielectric properties. We believe that TiO2-based ceramics are one of the most promising candidates in the field of electronic and energy-storage devices. (c) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.