First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems
First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems
复制标题
首次演示用于下一代通信系统的宽带 W 频段和 D 频段 GaN MMIC
DOI：
10.1109/mwsym.2017.8058796
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
M. Micovic
中科院分区：
文献类型：
--
作者：
A. Kurdoghlian;H. Moyer;H. Sharifi;David F. Brown;R. Nagele;J. Tai;R. Bowen;M. Wetzel;R. Grabar;D. Santos;M. Micovic
研制了可覆盖W波段和D波段宽带应用的高性能GaN MMIC。五级60-105 GHz LNA在整个频带内具有>23 dB的增益，六级D频带LNA在110-170 GHz范围内具有25 dB的增益。双平衡电阻FET混频器在74-94 GHz范围内具有−11至−15 dB的转换损耗。据我们所知，这些是第一次报道的GaN MMIC在这些频率下具有高宽带增益。
High-performing GaN MMICs that can cover broadband applications at W and D-Band have been fabricated and tested. A five stage 60–105 GHz LNA has >23 dB of gain across the band and a six stage D-Band LNA has 25 dB of gain from 110–170 GHz. A double balanced resistive FET mixer has −11 to −15 dB of conversion loss from 74–94 GHz. To our knowledge, these are the first reported GaN MMICs with high broadband gain at these frequencies.