Electrical-optical characterization of multijunction solar cells under 2000X concentration

Electrical-optical characterization of multijunction solar cells under 2000X concentration
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2000X 浓度下多结太阳能电池的电光特性

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发表时间:
2014
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通讯作者:
L. Sciortino
L. Sciortino
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作者:
G. Bonsignore;A. A. Gallitto;S. Agnello;M. Barbera;R. Candia;M. Cannas;A. Collura;Ignazio Dentici;F. Gelardi;U. L. Cicero;F. Montagnino;F. Paredes;L. Sciortino

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在FAE "Fotoericoad Alta Efficienza"("高效光伏")研究项目(PO FESR Sicilia 2007/2013 www.example.com)的框架中,我们对安装在原型HCPV模块上的商用InGaP/InGaAs/Ge三结太阳能电池(1cm2)进行了电学和光学表征,该原型HCPV模块安装在巴勒莫(意大利)。该系统使用基于矩形离轴抛物面反射镜的反射光学器件,孔径为45 × 45 cm 2,几何聚光比为2025。在这项研究中,我们报告的I-V曲线下测量的入射功率约为700 W/m2,导致在最大点(PMP)的电功率为41.4 W。我们还研究了顶部(InGaP)和中间(InGaAs)子电池的电致发光(EL)光谱的光学性质。通过对实验数据的分析,我们提取了这些III-V族半导体在305~385 K范围内的带隙能量。
In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties by the electroluminescence (EL) spectra of the top (InGaP) and middle (InGaAs) subcells. From the analysis of the experimental data we extracted the bandgap energies of these III-V semiconductors in the range 305÷385 K.