A HEMT-based cryogenic charge amplifier with sub-100 eVee ionization resolution for massive semiconductor dark matter detectors
A HEMT-based cryogenic charge amplifier with sub-100 eVee ionization resolution for massive semiconductor dark matter detectors
复制标题
基于 HEMT 的低温电荷放大器,具有低于 100 eVee 的电离分辨率,适用于大型半导体暗物质探测器
DOI:
10.1016/j.nima.2019.06.022
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发表时间:
2016
期刊:
影响因子:
--
通讯作者:
Y. Jin
中科院分区:
文献类型:
--
作者:
A. Phipps;A. Juillard;B. Sadoulet;B. Serfass;Y. Jin
We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background discrimination at the low recoil energies produced by low-mass WIMPs. We find a calibrated baseline ionization resolution of σ E= 91 eV e e. To our knowledge, this is the best direct ionization resolution achieved with such massive (≈ 150 pF capacitance) radiation detectors.
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影响因子:
5
作者:
Q. Arnaud;E. Armengaud;C. Augier;A. Benoȋt;L. Berg'e;J. Billard;A. Broniatowski;P. Camus;A. Cazes;M. Chapellier;F. Charlieux;M. D. J'esus;L. Dumoulin;K. Eitel;N. Foerster;J. Gascon;A. Giuliani;M. Gros;L. Hehn;Yong Jin;A. Juillard;M. Kleifges;V. Kozlov;H. Kraus;V. Kudryavtsev;H. Le-Sueur;R. Maisonobe;S. Marnieros;X. Navick;C. Nones;E. Olivieri;P. Pari;B. Paul;D. Poda;E. Queguiner;S. Rozov;V. Sanglard;S. Scorza;B. Siebenborn;L. Vagneron;M. Weber;E. Yakushev
通讯作者:
Q. Arnaud;E. Armengaud;C. Augier;A. Benoȋt;L. Berg'e;J. Billard;A. Broniatowski;P. Camus;A. Cazes;M. Chapellier;F. Charlieux;M. D. J'esus;L. Dumoulin;K. Eitel;N. Foerster;J. Gascon;A. Giuliani;M. Gros;L. Hehn;Yong Jin;A. Juillard;M. Kleifges;V. Kozlov;H. Kraus;V. Kudryavtsev;H. Le-Sueur;R. Maisonobe;S. Marnieros;X. Navick;C. Nones;E. Olivieri;P. Pari;B. Paul;D. Poda;E. Queguiner;S. Rozov;V. Sanglard;S. Scorza;B. Siebenborn;L. Vagneron;M. Weber;E. Yakushev
影响因子:
1.3
作者:
E. Armengaud;Q. Arnaud;C. Augier;A. Benoit;L. Berg'e;T. Bergmann;J. Billard;T. Boissière;G. Brès;A. Broniatowski;V. Brudanin;P. Camus;A. Cazes;M. Chapellier;F. Charlieux;M. D. J'esus;L. Dumoulin;K. Eitel;D. Filosofov;N. Foerster;Nicolas Fourches;G. Garde;J. Gascon;A. Giuliani;M. Grollier;M. Gros;L. Hehn;S. Herv'e;G. Heuermann;V. Humbert;Y. Jin;A. Juillard;C. K'ef'elian;M. Kleifges;V. Kozlov;H. Kraus;V. Kudryavtsev;H. Le-Sueur;J. Lin;R. Maisonobe;M. Mancuso;S. Marnieros;A. Menshikov;X. Navick;C. Nones;E. Olivieri;P. Pari;B. Paul;D. Poda;E. Queguiner;M. Robinson;H. Rodenas;S. Rozov;V. Sanglard;B. Schmidt;S. Scorza;B. Siebenborn;D. Tcherniakhovski;L. Vagneron;M. Weber;E. Yakushev;X. Zhang;A. Zolotarova
通讯作者:
E. Armengaud;Q. Arnaud;C. Augier;A. Benoit;L. Berg'e;T. Bergmann;J. Billard;T. Boissière;G. Brès;A. Broniatowski;V. Brudanin;P. Camus;A. Cazes;M. Chapellier;F. Charlieux;M. D. J'esus;L. Dumoulin;K. Eitel;D. Filosofov;N. Foerster;Nicolas Fourches;G. Garde;J. Gascon;A. Giuliani;M. Grollier;M. Gros;L. Hehn;S. Herv'e;G. Heuermann;V. Humbert;Y. Jin;A. Juillard;C. K'ef'elian;M. Kleifges;V. Kozlov;H. Kraus;V. Kudryavtsev;H. Le-Sueur;J. Lin;R. Maisonobe;M. Mancuso;S. Marnieros;A. Menshikov;X. Navick;C. Nones;E. Olivieri;P. Pari;B. Paul;D. Poda;E. Queguiner;M. Robinson;H. Rodenas;S. Rozov;V. Sanglard;B. Schmidt;S. Scorza;B. Siebenborn;D. Tcherniakhovski;L. Vagneron;M. Weber;E. Yakushev;X. Zhang;A. Zolotarova
影响因子:
5
作者:
Armengaud E
通讯作者:
Armengaud E
影响因子:
8.6
作者:
Akerib, D. S.;Alsum, S.;Zhang, C.
通讯作者:
Zhang, C.