Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
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DOI：
10.1002/adom.202201535
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发表时间：
2022-10
影响因子：
9
通讯作者：
Andrew R. Comstock;Melike Biliroglu;Dovletgeldi Seyitliyev;Aeron McConnell;E. Vetter;P. Reddy;R. Kirs
中科院分区：
文献类型：
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作者：
Andrew R. Comstock;Melike Biliroglu;Dovletgeldi Seyitliyev;Aeron McConnell;E. Vetter;P. Reddy;R. Kirs
最近成功地将半导体集成到自旋电子太赫兹发射器中，展示了通过超快退磁动力学控制太赫兹（THz）辐射的新途径。在这里，自旋电子太赫兹辐射从不同的超宽带隙（UWBG）半导体与铁磁体的界面进行了研究。作者表明，肖特基势垒在UWBG半导体氮化铝作为自旋过滤器，增加了从铁磁体注入的自旋电流的极化。此外，作者表明，由于Rashba效应引起的高自旋-电荷转换效率，Al0.25Ga0.75N和GaN之间界面处的二维电子气增强了发射辐射的幅度，这导致了发射幅度的标志性不对称。研究结果为5G以上超快通信技术的半导体/铁磁体异质结构的未来工程提供了框架。
Recent successful integration of semiconductors into spintronic THz emitters has demonstrated a new pathway of control over terahertz (THz) radiation through ultrafast demagnetization dynamics. Here, the spintronic THz emission from different ultrawide bandgap (UWBG) semiconductors interfaced with ferromagnets is studied. The authors show that the Schottky barrier in the UWBG semiconductor AlN acts as a spin filter that increases the polarization of the spin current injected from the ferromagnet. Furthermore, the authors show that the two‐dimensional electron gas at the interface between Al0.25Ga0.75N and GaN enhances the magnitude of the emitted radiation due to the high spin‐to‐charge conversion efficiency induced by the Rashba effect that results in a hallmark asymmetry in emission amplitude. The results provide a framework for future engineering of semiconducting/ferromagnet heterostructures for ultrafast communications technologies beyond 5G.