Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface
Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface
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DOI：
10.7567/apex.9.081201
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发表时间：
2016-08-01
影响因子：
2.3
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Nishimura, Tomonori;Yajima, Takeaki;Toriumi, Akira
元素金属/锗（Ge）界面表现出强费米能级钉扎（FLP），其通常基于Ge侧半导体性质来表征。在这项工作中，我们表明，金属属性显着影响肖特基势垒高度（SBH）的Ge。金属锗化物表现出FLP缓解和明确的衬底取向SBH对锗的依赖性，尽管在元素金属的情况下，几乎完美的FLP和非常轻微的取向依赖。结果，在锗化物/n-Ge（111）结处观察到欧姆特性。还讨论了减轻Ge上FLP所需的金属性质。(C)2016日本应用物理学会
The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP), which is usually characterized on the basis of Ge side semiconductor properties. In this work, we demonstrate that metal properties significantly affect the Schottky barrier height (SBH) on Ge. Metallic germanides show both FLP alleviation and a clear substrate orientation dependence of SBH on Ge, despite the nearly perfect FLP and very slight orientation dependence in the element metal case. As a result, ohmic characteristics are observed at germanide/n-Ge (111) junctions. The metal properties required to alleviate the FLP on Ge are also discussed. (C) 2016 The Japan Society of Applied Physics