A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs
A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated With Metal Oxide TFTs
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DOI：
10.1109/jeds.2018.2883585
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发表时间：
2019
影响因子：
2.3
通讯作者：
Zhuo-Jia Chen;Wen-Xing Xu;Jian-Dong Wu;Lei Zhou;Weijing Wu;J. Zou;Miao Xu;Lei Wang;Yu-Rong Liu;Junbiao Peng
中科院分区：
文献类型：
--
作者：
Zhuo-Jia Chen;Wen-Xing Xu;Jian-Dong Wu;Lei Zhou;Weijing Wu;J. Zou;Miao Xu;Lei Wang;Yu-Rong Liu;Junbiao Peng
This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors. In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (<inline-formula> <tex-math notation="LaTeX">$A_{v}$ </tex-math></inline-formula>) of 29.54 dB over a 3-dB bandwidth of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin (PM), and dc power consumption (<inline-formula> <tex-math notation="LaTeX">$P_{\mathrm{ DC}}$ </tex-math></inline-formula>) are 180.2 kHz, 21.5° PM and 5.07 mW, respectively.
