Observation of high carrier mobility in CH3NH3PbBr3 single crystals by AC photo-Hall measurements
Observation of high carrier mobility in CH3NH3PbBr3 single crystals by AC photo-Hall measurements
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DOI：
10.35848/1882-0786/abf02b
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发表时间：
2021-04
影响因子：
2.3
通讯作者：
Takumi Kimura;Kouhei Matsumori;K. Oto;Y. Kanemitsu;Y. Yamada
中科院分区：
文献类型：
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作者：
Takumi Kimura;Kouhei Matsumori;K. Oto;Y. Kanemitsu;Y. Yamada
载流子迁移率是半导体最基本的材料参数之一，也是器件应用和物理现象解释所必需的。我们通过光激发和双载流子分析下的交流霍尔测量相结合，确定了 CH3NH3PbBr3 单晶在高载流子密度范围内的电子和空穴迁移率。通过光掺杂，电子和空穴的迁移率均得到显着增强，并超过 300 cm2 V−1 s−1，与传统无机半导体的电子霍尔迁移率相当。我们的实验结果表明，在低载流子密度范围内，带电位错散射在室温下主导载流子传输。
Carrier mobility is one of the most fundamental material parameters of semiconductors and requisite for device applications and interpretation of physical phenomena. We determined the electron and hole mobilities of a CH3NH3PbBr3 single crystal in the high-carrier density regime by combining AC Hall measurements under photoexcitation and two-carrier analysis. Both electron and hole mobilities were significantly enhanced by photo-doping and exceeded 300 cm2 V−1 s−1, which are comparable to the electron Hall mobilities of conventional inorganic semiconductors. Our experimental results indicate that charged dislocation scattering dominates the carrier transport at room temperature in the low-carrier density regime.