Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices
Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices
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铁电电致发光器件 ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu 结构的制备和表征
DOI：
10.1143/jjap.48.09ka11
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发表时间：
2009
影响因子：
1.5
通讯作者：
Y. Tokunaga
中科院分区：
文献类型：
--
作者：
K. Aizawa;H. Inagaki;Yushi Takatsuka;Koichi Hoko;Yusuke Otani;Y. Tokunaga
首次制备了ZnO：Al（AZO）/Sr0.8Bi2.2Ta2O9（SBT）/Pt和AZO/SBT/Y2 O3：Eu/Pt两种结构，并研究了它们的结晶性、铁电性和电致发光（EL）性能。AZO/SBT/Pt结构显示出典型的磁滞回线，其中它们的双剩余极化约为5.3 µC/cm 2。SBT/Y_2O_3：Eu多晶结构生长在镀Pt的衬底上，铁电相形成在立方晶体的Y_2O_3：Eu薄膜上。测量了AZO/SBT/Y2 O3：Eu/Pt结构的电学和电致发光性能，观察到Eu 3+的5D 0 - 7 F1（λ=601 nm）和5D 0 - 7 F2（λ=617 nm）跃迁的电致发光峰。AZO/SBT/Y_2O_3：Eu/Pt结构的电致发光模式与Y_2O_3：Eu薄膜的光致发光模式不同。此外，在所制备的AZO/SBT/Y2 O3/Pt：Eu结构中观察到了具有逆时针磁滞回线的极化-电压特性和电流-电压特性的不对称行为。
ZnO:Al (AZO)/Sr0.8Bi2.2Ta2O9 (SBT)/Pt and AZO/SBT/Y2O3:Eu/Pt structures were fabricated, and their crystallinity, ferroelectric, and electroluminescent (EL) properties were investigated for the first time. The AZO/SBT/Pt structures showed a typical hysteresis loop, in which their double remnant polarization was approximately 5.3 µC/cm2. The polycrystalline SBT/Y2O3:Eu structures were grown on a Pt-coated substrate, in which ferroelectric phases were formed on an Y2O3:Eu film with cubic crystals. The electrical and EL properties of the AZO/SBT/Y2O3:Eu/Pt structures were measured, and then EL emission peaks associated with the 5D0–7F1 (λ=601 nm) and 5D0–7F2 (λ=617 nm) transitions of Eu3+ were observed. The EL emission pattern of the AZO/SBT/Y2O3:Eu/Pt structure was different from the PL emission pattern of the Y2O3:Eu film. Furthermore, polarization–voltage characteristics with counterclockwise hysteresis loops and an asymmetric behavior of current–voltage characteristics were observed in the fabricated AZO/SBT/Y2O3/Pt:Eu structures.