Atomic layer doping of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface.
Atomic layer doping of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface.
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DOI：
10.1039/c7nr07177a
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发表时间：
2017-11
期刊：
影响因子：
6.7
通讯作者：
K. Murata;C. Kirkham;S. Tsubomatsu;Takashi Kanazawa;K. Nitta;Y. Terada;T. Uruga;K. Nittoh;D. Bowler;K. Miki
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文献类型：
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作者：
K. Murata;C. Kirkham;S. Tsubomatsu;Takashi Kanazawa;K. Nitta;Y. Terada;T. Uruga;K. Nittoh;D. Bowler;K. Miki
我们利用Si上的Mn原子链实现了Mn δ掺杂到Si和Si/Ge界面中（001）。高灵敏度x射线吸收精细结构技术表明，室温下的包封可以防止硅化物/锗化物的形成，同时保持一维各向异性结构。通过对入射x射线偏振依赖性和后退火效应的研究揭示了这一点。密度泛函理论计算表明Mn原子位于取代位上，与实验结果吻合较好。一个全面的磁输运研究揭示了Mn δ掺杂层内的磁有序，在120 K左右观察到。我们证明了基于表面纳米结构埋藏的掺杂方法可以实现传统掺杂方法无法实现的系统。
We realize Mn δ-doping into Si and Si/Ge interfaces using Mn atomic chains on Si(001). Highly sensitive X-ray absorption fine structure techniques reveal that encapsulation at room temperature prevents the formation of silicides/germanides while maintaining one-dimensional anisotropic structures. This is revealed by studying both the incident X-ray polarization dependence and post-annealing effects. Density functional theory calculations suggest that Mn atoms are located at substitutional sites, and show good agreement with experiment. A comprehensive magnetotransport study reveals magnetic ordering within the Mn δ-doped layer, which is observed at around 120 K. We demonstrate that doping methods based on the burial of surface nanostructures allows for the realization of systems for which conventional doping methods fail.