Metaln-6HSiC surface barrier heightExperimental data and description in the traditional terms
Metaln-6HSiC surface barrier heightExperimental data and description in the traditional terms
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Metaln-6HSiC表面势垒高度实验数据和传统术语的描述
DOI：
10.1063/1.359668
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
V. Chelnokov
中科院分区：
文献类型：
--
作者：
A. L. Syrkina;A. Andreev;A. Lebedev;M. Rastegaeva;V. Chelnokov
本研究将几种金属（Al, Au, Mo, Cr）在金属- n - 6H-SiC结构中表面势垒高度的实验数据与其他可用数据以及表面势垒形成的经典模型进行了比较。我们观察到随着给体浓度的增加，Au-n - 6H-SiC、Mo-n - 6H-SiC和Al-n - 6H-SiC结构的势垒高度降低。根据我们的数据和其他作者的数据，我们估计（0001）‐Si‐面n‐6H-SiC的平均表面能，出现在电容电压（C-V）测量中，在室温下约为0.3Eg （Eg是能带隙），相应的表面态密度约为1013 cm−2 eV−1。
This work compares our experimental data on surface barrier height in structures metal–n‐6H–SiC for several metals (Al, Au, Mo, Cr) with other data available and with classical models of surface barrier formation. We observed decreasing of barrier height with increasing of donors concentration for the structures Au–n‐6H–SiC, Mo–n‐6H–SiC and Al–n‐6H–SiC. We estimate the average surface energy level for (0001)‐Si‐faced n‐6H–SiC, appearing in capacitance–voltage (C–V) measurements, to be about 0.3Eg at room temperature (Eg is the energy band gap) and corresponding surface states density to be about 1013 cm−2 eV−1, based both on our data and data of other authors.