Structure of V–Al2,O3 interfaces grown by molecular beam epitaxy
Structure of V–Al2,O3 interfaces grown by molecular beam epitaxy
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分子束外延生长的V-Al2,O3界面结构
DOI：
10.1080/01418619408242539
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发表时间：
1994
影响因子：
1.6
通讯作者：
C. P. Flynn
中科院分区：
文献类型：
--
作者：
Y. Ikuhara;P. Pirouz;A. Heuer;S. Yadavalli;C. P. Flynn
摘要：采用分子束外延技术在蓝宝石（102）r平面上沉积V薄膜。制备了横截面和平面试样，并通过常规和高分辨率电子显微镜（HREM）从不同方向研究了V-Al2O3界面。发现薄膜相对于衬底呈外延生长，倾斜角度约为2°。利用选择区衍射图和HREM，确定了V和Al2O3的取向关系，分析了几何错配位错和界面层错。错配位错是V-Al2O3界面两侧原子间间距大不匹配的几何结果，从沉积开始就存在。由于较大的晶格失配，V-Al2O3界面预计是非相干的；然而，由于界面两侧原子之间的键合，界面附近的原子从t…
Abstract V films were deposited on the (102) R-plane of sapphire by molecular beam epitaxy. Cross-sectional and plan-view specimens were prepared and the V–Al2O3 interface was investigated from different directions by conventional and high-resolution electron microscopy (HREM). It was found that the film grows in an epitaxial manner with respect to the substrate with a tilt angle of about 2°. Using selected-area diffraction patterns and HREM, the orientation relationship between V and Al2O3 was determined and the geometrical misfit dislocations and interfacial stacking faults were analysed. The misfit dislocations are a geometrical consequence of the large mismatch between interatomic spacings at the two sides of the V–Al2O3 interface and exist from the start of deposition. Because of the large lattice mismatch, the V–Al2O3 interface is expected to be incoherent; however, because of bonding between the atoms on the two sides of the interface, the atoms in the vicinity of the interface are displaced from t...