Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions
Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions
复制标题
GaAs(001) 上 Ga 液滴的自组装生长：表面重构的作用
DOI：
10.1021/cg500355f
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发表时间：
2014
影响因子：
3.8
通讯作者：
and J. Nakamura
中科院分区：
文献类型：
--
作者：
A. Ohtake;T. Mano;A. HAgiwara;and J. Nakamura
系统地研究了Ga液滴在GaAs(001)面上的形成过程。我们证明了GaAs衬底表面原子结构决定了Ga原子的表面扩散，这对决定Ga液滴的大小和密度起着关键的作用。修改初始表面重构后，在富As(2×4)和c(4×4)β表面形成了Ga液滴，而在富Ga(4×6)表面直接形成了液滴。Ga在(4×6)表面的密度超过1012 cm-2，明显高于富As的c(4×4)β表面。
Formation processes of Ga droplets on GaAs(001) have been systematically studied. We present the evidence that the surface atomic structures of the GaAs substrate dominate the surface diffusion of Ga atoms, which plays a key role in determining the size and density of Ga droplets. The Ga droplets are formed on the As-rich (2 × 4) and c(4 × 4)β surface after the modification of the initial surface reconstructions, while droplets are directly formed on the Ga-rich (4 × 6) surface. The density of Ga droplets on the (4 × 6) surface exceeds 1012cm–2, which is significantly higher than that on the As-rich c(4 × 4)β surfaces.