WR1.5 Silicon Micromachined Waveguide Components and Active Circuit Integration Methodology
WR1.5 Silicon Micromachined Waveguide Components and Active Circuit Integration Methodology
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DOI：
10.1109/tmtt.2012.2184296
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发表时间：
2012-04-01
影响因子：
4.3
通讯作者：
Deal, William R.
中科院分区：
文献类型：
--
作者：
Leong, Kevin M. K. H.;Hennig, Kelly;Deal, William R.
本文介绍了工作在WR1.5波导波段（500- 750ghz）的硅微机械波导结构的发展。在600 GHz下测得平均波导损耗为0.15 dB/mm。所提出的方法的能力已经通过开发具有0.9 db通带损耗的570 GHz三极波导带通滤波器和工作在670 GHz的y结耦合器得到了证明。这些组件已经使用一种新的晶圆上测试方法进行了测试，以快速表征吞吐量。一种集成固态器件和微机械波导元件的批处理方法也得到了发展。这项技术的进一步发展将导致下一代太赫兹频率晶圆级有源电路封装。
This paper describes the development of silicon micromachined waveguide structures operating in the WR1.5 waveguide band (500-750 GHz). Average waveguide loss of 0.15 dB/mm was measured at 600 GHz. Capabilities of the proposed approach have been shown with the development of a 570-GHz three-pole waveguide bandpass filter that has a 0.9-dB passband loss and a Y-junction coupler operating at 670 GHz. These components have been tested using a novel on-wafer testing method for rapid characterization throughput. A batch process approach for integration of solid-state devices and micromachined waveguide components has also been developed. Further development of this technology will lead to the next generation of terahertz-frequency wafer-level packaging of active circuits.