High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts
High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts
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具有边缘接触的高质量氢倍半硅氧烷封装石墨烯器件
DOI：
10.1016/j.matlet.2019.126765
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发表时间：
2019
影响因子：
3
通讯作者：
Li P
中科院分区：
文献类型：
--
作者：
Li P
开发了一种简单的工艺来制造化学气相沉积（CVD）石墨烯器件，该器件由氢硅氧烷（HSQ）封装并通过边缘接触寻址。欧姆接触的接触电阻约为540 Ω·µm。从第一个加工步骤开始，上石墨烯表面就受到HSQ的保护，从而使器件制造在不损害载流子迁移率的情况下进行。相反，在HSQ封装后观察到迁移率增强。这种方法不仅可以有效地保护设备免受周围环境的影响，而且对于实现hsq辅助转移石墨烯和其他2D材料也很重要。
A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.