Short-channel robustness from negative capacitance in 2D NC-FETs
Short-channel robustness from negative capacitance in 2D NC-FETs
复制标题
DOI：
10.1063/5.0030555
复制
发表时间：
2021-03
影响因子：
4
通讯作者：
Yuh-Chen Lin;G. Rayner;Jorge A. Cardenas;A. Franklin
中科院分区：
文献类型：
--
作者：
Yuh-Chen Lin;G. Rayner;Jorge A. Cardenas;A. Franklin
到目前为止，性能的鲁棒性，包括容限沟道长度缩放效应，在缩放晶体管已经变得越来越重要。负电容（NC）场效应晶体管（FET）已经引起了相当大的关注，许多研究表明，NC效应是有益的器件缩放。然而，在具有二维（2D）半导体沟道的NC-FET中缺乏短沟道行为的实验证据，并且理论研究有限。在这里，我们实验研究2D MoS 2基NC-FET使用MoS 2与CMOS兼容的铪锆氧化物（HfZrO 2或HZO）作为铁电体（FE），并表现出显着的短沟道行为相比，类似的2D MoS 2 FET。据观察，亚阈值开关的改善变得越来越显着，在较短的沟道长度，下降到20 nm。从电容网络的分析，我们表明，NC效应的影响，在铁电体中，这增强了栅极控制，有利于沟道长度缩放幅度较大的极化。
To date, the robustness of performance, including tolerance to channel-length scaling effects, in scaled transistors has become increasingly important. Negative capacitance (NC) field-effect transistors (FETs) have drawn considerable attention and many studies have revealed that the NC effect is beneficial for device scaling. However, there is a lack of experimental evidence of short-channel behavior in NC-FETs with two-dimensional (2D) semiconducting channels and theoretical studies are limited. Here, we experimentally study 2D MoS2-based NC-FETs using MoS2 with CMOS-compatible hafnium zirconium oxide (HfZrO2 or HZO) as the ferroelectric (FE) and demonstrate remarkable short-channel behavior compared to similar 2D MoS2 FETs. It was observed that the subthreshold switching improvement becomes increasingly significant at shorter channel lengths, down to 20 nm. From analysis of the capacitive network, we show that the NC effect is impacted by a larger magnitude of polarization in the ferroelectric, which enhances gate control and is beneficial to channel-length scaling.