Long-time stability of photoluminescence in porous silicon
Long-time stability of photoluminescence in porous silicon
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DOI：
10.1016/s0040-6090(00)01054-3
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发表时间：
2000-08-22
期刊：
影响因子：
2.1
通讯作者：
Kozlowski, F
中科院分区：
文献类型：
--
作者：
Fischer, M;Hillerich, B;Kozlowski, F
研究了多孔硅（PS）在室温和高温下的长期光致发光（PL）行为，以评估PS在商业应用中的适用性，这些应用大多需要数年的寿命。在较高的储存温度下（60-120℃），发光强度的衰减时间t(1)在1.8 - 0.4 h之间。令人惊讶的是，在高温下储存约20天后，发光强度恢复到量子效率QE = 2%的稳态值，这也接近于室温储存时的水平。通过氧化样品，QE增加到大约。3%)。从恢复后极慢的PL衰减来看，估计衰减时间常数t(3)近似于2000天。对于被紫外线（1.5 mW/cm(2)）永久照射的样品，衰变时间更短。因此，在间歇性紫外线辐射下，寿命可达数年。(C) 2000 Elsevier Science S.A.版权所有
The long-term behavior of photoluminescence (PL) of porous silicon (PS) at room temperature (RT) and elevated temperatures was investigated in order to assess the suitability of PS for commercial applications, which mostly require lifetimes of years. At higher storage temperatures (60-120 degrees C) the decay time t(1) of PL intensity is between 1.8 and 0.4 h. Surprisingly after approximately 20 days of storage at high temperature the PL intensity recovers to a steady-state value of quantum efficiency QE = 2%, which is also approached when stored at room temperature. By oxidizing the samples the QE is increased (to approx. 3%). From the extremely slow decay of PL after recovery, a decay time constant of t(3) approximate to 2000 days was estimated. For samples, that are permanently irradiated by UV light (1.5 mW/cm(2)), the decay time is shorter. Hence, with intermitting UV radiation lifetimes of years can be expected. (C) 2000 Elsevier Science S.A. All rights reserved.