Resistivity Anomaly in Structurally Disordered PbFCl-type Arsenide Selenides
Resistivity Anomaly in Structurally Disordered PbFCl-type Arsenide Selenides
复制标题
结构无序的 PbFCl 型砷化硒化物中的电阻率异常
DOI：
10.1007/s10909-007-9312-2
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发表时间：
2007
影响因子：
2
通讯作者：
F. Steglich
中科院分区：
文献类型：
--
作者：
T. Cichorek;D. Gnida;R. Niewa;A. Schlechte;M. Schmidt;Y. Prots;R. Ramlau;Z. Henkie;R. Kniep;F. Steglich
从x射线和电子衍射以及透射电镜研究推断，pbcl型砷化物硒化物ThAsSe和ZrAs1.40 Se0.50单晶表现出固有的结构紊乱。这种结构紊乱被认为是隧道态形成的原因，隧道态是玻璃型温度依赖的原因，热导率和比热在毫开尔文温度范围内。当冷却至16k以下时，电阻率增加为-AT1/2。此外，它不受施加磁场的影响。这些观测结果被认为是结构双能级系统衍生的双通道近藤效应实验实现的证据。
Single crystals of the PbFCl-type arsenide selenides ThAsSe and ZrAs1.40 Se0.50 display intrinsic structural disorder, as inferred from X-ray and electron diffraction as well as transmission-electron-microscopy studies. This structural disorder is held responsible for the formation of tunneling states that are a cause of glass-type temperature dependencies of both the thermal conductivity and the specific heat in the millikelvin temperature range. The electrical resistivity increases as –AT1/2 upon cooling to below 16 K. Furthermore, it is unaffected by the application of a magnetic field. These observations are considered as evidence for an experimental realization of a two-channel Kondo effect derived from structural two-level systems.