Thermal effect of InP/InAs nanowire lasers integrated on different optical platforms
Thermal effect of InP/InAs nanowire lasers integrated on different optical platforms
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DOI：
10.1364/osac.424375
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
M. Takiguchi;Guoqiang Zhang;Evans Frandsen;H. Sumikura;T. Tsuchizawa;Satoshi Sasaki;A. Shinya;K. Oguri;H. Gotoh;M. Notomi
中科院分区：
文献类型：
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作者：
M. Takiguchi;Guoqiang Zhang;Evans Frandsen;H. Sumikura;T. Tsuchizawa;Satoshi Sasaki;A. Shinya;K. Oguri;H. Gotoh;M. Notomi
用于未来光子芯片处理器的III-V纳米线激光器需要在室温下连续工作，但由于加热效应，这一点还没有实现。本文系统地研究了Al_2O_3沉积前后在镀金衬底上以及在Si和SiN波导上放置的纳米线的热效应对激光性能的限制。我们的发现表明，纳米线的加热与纳米线和衬底之间的热阻密切相关。我们的结果揭示了连续波纳米线激光操作的潜力，朝着未来将纳米线集成到光子平台上的光子片上处理器。
III-V nanowire lasers for future photonic on-chip processors require continuous-wave operation at room temperature; however, this has not been achieved yet due to heating effects. In this work, the heating effects limiting laser performance is systematically investigated for nanowires placed on Au-coated substrates before and after Al2O3 deposition and on Si and SiN waveguides. Our findings indicate that nanowire heating is strongly related to the thermal resistance between the nanowires and substrates. Our results reveal the potential for continuous-wave nanowire laser operation, towards future photonic on-chip processors with nanowires integrated on photonic platforms.