Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy
Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy
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DOI:
10.1016/s0169-4332(03)00452-5
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发表时间:
2003-06
影响因子:
6.7
通讯作者:
Md. Nurul Kabir Bhuiyan;A. Matsuda;T. Yasumura;T. Tambo;C. Tatsuyama
中科院分区:
文献类型:
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作者:
Md. Nurul Kabir Bhuiyan;A. Matsuda;T. Yasumura;T. Tambo;C. Tatsuyama
Perovskite-type oxide SrTiO3(STO) thin films with thicknesses of 30, 100, 300 and 1000Å have been grown epitaxially on Si(001) substrates using co-evaporation of Sr and Ti in an O2atmosphere of 9.0×10−8Torr at 500°C by molecular beam epitaxy (MBE). SrO buffer layers of 100Å have been grown at 350°C on Si substrates. The SrTiO3films have been studied using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) as a function of the thickness of STO films. By heating the Si(001) substrates at 800°C under Sr exposure for 2min after the chemical cleaning and formation of protective SiO2layer, RHEED patterns of the atomically clean Si(001)–2 × 1 surface have been observed. RHEED pattern becomes unclear after the growth of 30 and 100Å-thick STO films. On the contrary, spotty and streaky patterns, and spotty patterns are observed clearly for 300 and 1000Å-thick films, respectively. The surface crystallinity improves for all the samples after annealing at 800°C. The STO films with thicknesses of 30 and 1000Å consist of grains in the images of atomic force microscopy. The flatness and crystallinity of STO films with the thickness of 100–300Å are better than the other films.