In-situ Crosslinking and n-Doping of Semiconducting Polymers and Their Application as Efficient Electron-Transporting Materials in Inverted Polymer Solar Cells
In-situ Crosslinking and n-Doping of Semiconducting Polymers and Their Application as Efficient Electron-Transporting Materials in Inverted Polymer Solar Cells
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DOI：
10.1002/aenm.201100429
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发表时间：
2011-11-01
影响因子：
27.8
通讯作者：
Jen, Alex K. -Y.
中科院分区：
文献类型：
--
作者：
Cho, Namchul;Yip, Hin-Lap;Jen, Alex K. -Y.
在这项研究中，我们证明了半导体聚合物的原位n掺杂和交联作为倒置配置聚合物太阳能电池的有效电子传输材料。半导体聚合物与双（全氟苯基）叠氮化物（bis-PFPA）交联，形成坚固的耐溶剂薄膜，从而防止后续基于溶液的器件加工过程中溶剂引起的侵蚀。此外，用(4-(1,3-二甲基-2,3-二氢-1H-苯并咪唑-2-基)苯基)二甲胺(N-DMBI)对半导体聚合物进行化学正掺杂，将太阳能电池的功率转换效率从0.69%大幅提高到3.42%。这些结果为普遍适用的聚合物界面材料的进展开辟了道路，不仅提供了高器件性能，而且为溶液加工的多层太阳能电池器件提供了有效的制造方法。
In this study, we demonstrate in-situ n-doping and crosslinking of semiconducting polymers as efficient electron-transporting materials for inverted configuration polymer solar cells. The semiconducting polymers were crosslinked with bis(perfluorophenyl) azide (bis-PFPA) to form a robust solvent-resistant film, thereby preventing solvent-induced erosion during subsequent solution-based device processing. In addition, chemical n-doping of semiconducting polymers with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) substantially improved the power conversion efficiency of solar cells from 0.69% to 3.42%. These results open the way for progress on generally applicable polymeric interface materials, providing not only high device performance but also an effective fabrication method for solution-processed multilayer solar cell devices.