Statistical Variability Analysis in Vertically Stacked Gate All Around FETs at 7 nm Technology
Statistical Variability Analysis in Vertically Stacked Gate All Around FETs at 7 nm Technology
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DOI：
10.1109/icsict.2018.8565797
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发表时间：
2018-10
期刊：
影响因子：
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通讯作者：
Yue Zhuo;Xianglong Li;Yabin Sun;Xiaojin Li;Yanling Shi;Shoumian Chen;ShaoJian Hu;Ao Guo
中科院分区：
文献类型：
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作者：
Yue Zhuo;Xianglong Li;Yabin Sun;Xiaojin Li;Yanling Shi;Shoumian Chen;ShaoJian Hu;Ao Guo
本文采用三维TCAD仿真方法，对促进栅全场效应晶体管（GAAFET）在7nm节点上的统计变异性进行了研究。通过500个调查样品，分析了界面陷阱波动（ITF）、随机掺杂波动（RDF）、功函数变化（WFV）和氧化物厚度变化（TOXV）等随机变化源的影响。直流特性的波动具有明显的变化依赖性。RDF对驱动电流ION有较大影响，而ITF、TOXV和WFV对阈下区域的VTH和SS波动有显著影响。此外，还检测了陷阱对ITF优化的敏感性，ITF与TOXV的相互作用增强了亚阈值参数的变化。
In this paper, the statistical variability in the promoting gate all around field effect transistor (GAAFET) at 7 nm node is performed by 3D TCAD simulation. The effects of random variation sources, such as interface traps fluctuation (ITF), random dopants fluctuation (RDF), work function variation (WFV), and oxide thickness variation (TOXV), are analyzed through 500 investigated samples. A distinct variation dependence is found in fluctuation of DC characteristics. RDF is shown to have great influence on the drive current ION, while ITF, TOXV, and WFV are significant to fluctuate VTH and SS in the subthreshold region. Besides, the sensitive of trap is detected for the optimization of ITF, and the interaction between ITF and TOXV strengthens the variation of subthreshold parameters.