Hybrid-orientation technology (HOT): opportunities and challenges
Hybrid-orientation technology (HOT): opportunities and challenges
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DOI：
10.1109/ted.2006.872693
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发表时间：
2006-04
影响因子：
3.1
通讯作者：
Min Yang;Victor Chan;K. K. Chan-K.;Leathen Shi;David M. Fried;James H. Stathis;A. I. Chou;
中科院分区：
文献类型：
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作者：
Min Yang;Victor Chan;K. K. Chan-K.;Leathen Shi;David M. Fried;James H. Stathis;A. I. Chou;
在旨在扩展硅CMOS路线图的创新器件结构开始时，已经研究了许多技术来提高硅MOSFET中的载流子迁移率。一种新型的平面硅CMOS结构，寻求优化的表面取向，从而为nFET和pFET的载流子迁移率，出现。混合取向技术通过晶片键合和硅选择性外延提供（100）表面取向的nFET和[110]表面取向的pFET。本文综述了该器件的制备工艺和器件特性。
At the onset of innovative device structures intended to extend the roadmap for silicon CMOS, many techniques have been investigated to improve carrier mobility in silicon MOSFETs. A novel planar silicon CMOS structure, seeking optimized surface orientation, and hence carrier mobilities for both nFETs and pFETs, emerged. Hybrid-orientation technology provides nFETs on (100) surface orientation and pFETs on [110] surface orientation through wafer bonding and silicon selective epitaxy. The fabrication processes and device characteristics are reviewed in this paper.