Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers
Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers
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DOI：
10.1063/1.2135204
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发表时间：
2005-11
影响因子：
4
通讯作者：
I. Marko;N. Massé;S. Sweeney;A. Andreev;A. Adams;N. Hatori;M. Sugawara
中科院分区：
文献类型：
--
作者：
I. Marko;N. Massé;S. Sweeney;A. Andreev;A. Adams;N. Hatori;M. Sugawara
The radiative and nonradiative components of the threshold current in 1.3μm, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T0 values observed near room temperature.
