Order-Disorder Phenomena and Their Effects on Bandgap in ZnSnP2
Order-Disorder Phenomena and Their Effects on Bandgap in ZnSnP2
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ZnSnP2 中的有序-无序现象及其对带隙的影响
DOI：
10.1021/acs.jpcc.6b11215
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
S. Nakatsuka and Y. Nose
中科院分区：
文献类型：
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作者：
榊祥太;越崎直人;池上浩;辻剛志;石川善恵;品川一成;S. Nakatsuka and Y. Nose
三元化合物半导体ZnSnP_2具有有序-无序转变，其有序相和无序相分别为黄铜矿（I_4 ~ 2d，a= 5.651 nm，c= 2a）和闪锌矿（F_4 ~ 3 m，a= 5.651 nm）。通过对不同冷却速率下生长的ZnSnP 2块体晶体的分析，研究了晶体的禁带宽度与长程有序参数η之间的定量关系。采用奇普曼和Warren方法计算了X射线衍射谱的长程有序参数。结果表明，随着冷却速率的增加，长程有序参数η从0.94逐渐减小到0.54，禁带宽度从1.60逐渐减小到1.37 eV，与η值相对应。通过退火过程控制长程有序参数，可以实现ZnSnP 2的带隙调谐。本研究阐明了有序-无序现象对模型材料ZnSnP 2带隙的影响，基于长程有序参数的评估，这也是一种有前途的技术，可以在没有成分控制的情况下调节带隙。
A ternary compound semiconductor ZnSnP2has the order–disorder transition, where the ordered and disordered phases are chalcopyrite (I4̅2d,a= 5.651 Å,c= 2a) and sphalerite (F4̅3m,a= 5.651 Å), respectively. In this study, the quantitative relationship between bandgap and long-range order parameter η was investigated by analyzing ZnSnP2bulk crystals obtained by various cooling rates in crystal growth. The Chipman and Warren method was used to evaluate the long-range order parameters from X-ray difffaction profiles. The results showed that the long-range order parameter η decreases from 0.94 to 0.54 with the increase in cooling rates, and the bandgap gradually reduced from 1.60 to 1.37 eV, corresponding to the η value. It was also demonstrated that bandgap tuning of ZnSnP2was possible by controlling the long-range order parameter through annealing process. This study clarified the effects of the order–disorder phenomena on bandgap in a model material, ZnSnP2, based on the evaluation of long-range order parameter, which is also a promising technique to tune the bandgap without composition control.