Low-temperature direct bonding of glass nanofluidic chips using a two-step plasma surface activation process
Low-temperature direct bonding of glass nanofluidic chips using a two-step plasma surface activation process
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DOI:
10.1007/s00216-011-5574-2
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发表时间:
2011
影响因子:
4.3
通讯作者:
Yan Xu;Chenxi Wang;Yiyang Dong;Lixiao Li;Kihoon Jang;K. Mawatari;T. Suga;T. Kitamori
中科院分区:
文献类型:
--
作者:
Yan Xu;Chenxi Wang;Yiyang Dong;Lixiao Li;Kihoon Jang;K. Mawatari;T. Suga;T. Kitamori
Owing to the well-established nanochannel fabrication technology in 2D nanoscales with high resolution, reproducibility, and flexibility, glass is the leading, ideal, and unsubstitutable material for the fabrication of nanofluidic chips. However, high temperature (~1,000 °C) and a vacuum condition are usually required in the conventional fusion bonding process, unfortunately impeding the nanofluidic applications and even the development of the whole field of nanofluidics. We present a direct bonding of fused silica glass nanofluidic chips at low temperature, around 200 °C in ambient air, through a two-step plasma surface activation process which consists of an O2reactive ion etching plasma treatment followed by a nitrogen microwave radical activation. The low-temperature bonded glass nanofluidic chips not only had high bonding strength but also could work continuously without leakage during liquid introduction driven by air pressure even at 450 kPa, a very high pressure which can meet the requirements of most nanofluidic operations. Owing to the mild conditions required in the bonding process, the method has the potential to allow the integration of a range of functional elements into nanofluidic chips during manufacture, which is nearly impossible in the conventional high-temperature fusion bonding process. Therefore, we believe that the developed low-temperature bonding would be very useful and contribute to the field of nanofluidics.FigureDirect bonding of fused silica glass nanofluidic chips at low temperature, around 200 °C in ambient air, through a two-step plasma surface activation process which consists of an O2RIE plasma treatment followed by a nitrogen MW radical activation