Microstructure and magnetic properties of CoCr thin films formed on Ge layer
Microstructure and magnetic properties of CoCr thin films formed on Ge layer
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Ge层上CoCr薄膜的微观结构和磁性能
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
K. Yoshida
中科院分区：
文献类型：
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作者：
M. Futamoto;Y. Honda;H. Kakibayashi;K. Yoshida
为了改善 c 轴取向的柱状生长，研究了在 CoCr 合金沉积之前在基底上形成的各种底层上 CoCr 晶体的成核。通过透射电子显微镜 (TEM) 检查真空沉积 CoCr 合金薄膜的微观结构。研究发现类非晶Ge是制备高取向CoCr薄膜的合适底层材料。横截面 TEM 研究表明，在 Ge 层上形成的 CoCr 薄膜由在整个薄膜厚度上垂直生长的柱状晶体组成。在Ge层上形成的CoCr膜具有大的垂直磁各向异性。使用高取向CoCr薄膜显着改善了读写(R/W)特性，并且实现了D 50 =230kFCI的非常高的记录密度。讨论了Ge层对CoCr晶体成核的作用。
To improve the c-axis oriented columnar growth, the nucleation of CoCr crystals on various underlayers which are formed on substrates prior to CoCr alloy deposition is studied. Microstructures of vacuum deposited CoCr alloy films are examined by transmission electron microscopy (TEM). It is found that an amorphous-like Ge is a suitable underlayer material to prepare highly oriented CoCr films. Cross-sectional TEM study indicates that the CoCr film formed on Ge layer consists of pillarlike crystals grown vertically throughout the film thickness. The CoCr film formed on Ge layer has a large perpendicular magnetic anisotropy. The read-write (R/W) characteristics have been markedly improved using the highly oriented CoCr film and a very high recording density of D 50 =230 kFCI is achieved, The role of the Ge layer on nucleation of CoCr crystal is discussed.